| Part Number | Package | Band(MHz) | Application | Ppeak(dBm) | Pavg(dBm) | Eff@Pavg(%) | Linear Gain(dB) | Status | Download |
|---|---|---|---|---|---|---|---|---|---|
| DXG1CH08B-240CF | Ceramic 400-2 | 758~821 | Telecom Infrastructure | 53.8 | - | - | - | Released Product | |
| DXG1CH08A-560EF | Ceramic 780-4 | 758~821 | Telecom Infrastructure | 57.0 | 49.0 | 56.0 | 18.0 | Released Product | |
| DXG1CH08A-540EF | Ceramic 780-4 | 758~821 | Telecom Infrastructure | 57.0 | 49.0 | 58.0 | 18.0 | Released Product | |
| DXG1CH19A-100EF | Ceramic 400-4 | 1805~2170 | Telecom Infrastructure | 50.0 | 41.7 | 58.0 | 16.8 | Released Product | |
| DXG1CH19A-370EF | Ceramic 780-4 | 1805~1880 | Telecom Infrastructure | 55.7 | 47.5 | 56.0 | 15.5 | Released Product | |
| DXG1CH22A-520EF | Ceramic 780-4 | 2110~2170 | Telecom Infrastructure | 57.1 | 49.0 | 58.2 | 14.8 | Released Product | |
| DXG1CH27A-200EF | Ceramic 780-4 | 2496~2690 | Telecom Infrastructure | 53.4 | 45.0 | 50.0 | 14.1 | Released Product | |
| DXG2CH27A-500EFV | Ceramic 780-4V | 2500~2700 | Telecom Infrastructure | 56.7 | 47.2 | 52.9 | 15.0 | Released Product | |
| DXG1CH38A-200EF | Ceramic 780-4 | 3300~3800 | Telecom Infrastructure | 53.0 | 44.5 | 45.0 | 15.3 | Released Product | |
| DXG2CH38A-450EFV | Ceramic 780-4V | 3300~3800 | Telecom Infrastructure | 56.7 | 47.5 | 46.0 | 14.5 | Released Product | |
| DXG1CHD8A-F2EF | Ceramic 780-4 | 3300~3800 | Telecom Infrastructure | 56.5 | 48.5 | 42.0 | 14.0 | Released Product | |
| DXG2CH50A-200EF | Ceramic 780-4 | 4800~5000 | Telecom Infrastructure | 53.2 | 44.5 | 44.2 | 14.2 | Engineering Sample | |
| DOD1H0015-900EF | Ceramic 780-4 | DC~1500 | RF Energy | 58.7 | 58.3 | 79.8 | 18.0 | Engineering Sample | |
| DOD1H0015-1800EF | Ceramic 1230-4 | DC~1500 | RF Energy | 61.4 | 60.8 | 80.2 | 20.8 | Engineering Sample | |
| DOD1H2425-320EF | Ceramic 780-4 | 2400~2500 | RF Energy | 55.1 | 54.8 | 73.5 | 14.0 | Released Product | |
| DOD1H2425-600EF | Ceramic 1230-4 | 2400~2500 | RF Energy | 57.9 | 57.4 | 72.5 | 15.0 | Released Product | |
| DXG1CH60B-45CF/DF | Ceramic 200-2 | DC~6000 | Multi-Market | 46.5 | - | - | - | Released Product |
DXG1CH08B-240CF is a 240 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 758 MHz to 821 MHz cellular base station applications. It features input matching, wideband and an earless thermally-enhanced package.
Parameter | Value | Unit |
Frequency (Min.) | 758 | MHz |
Frequency (Max.) | 821 | MHz |
Supply Voltage (Typ.) | 48 | MHz |
Psat (Typ.) | 53.8 | V |
Power Gain | / | dBm |
Efficiency | / | dB |
ACPR | / | dBc |
Note: Above Performance is the typical performance in Dynax’s demo with the device soldered to the heatsink, test condition: VDS = 48 V, IDQ = 650 mA, Pout = 47.8 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG1CH08A-560EF is a 560 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 758 MHz to 821 MHz cellular base station applications. It features input matching, wideband and an earless thermally-enhanced package.
Parameter | Value | Unit |
Frequency (Min.) | 758 | MHz |
Frequency (Max.) | 821 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 57.0 | dBm |
Power Gain @ 780 MHz | 18.0 | dB |
Efficiency @ 780 MHz | 56 | % |
ACPR @ 780 MHz | -28.0 | dBC |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 500 mA, VGSB = - 5.2 V, Pout = 49.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG1CH08A-540EF is a 540 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 758 MHz to 821 MHz cellular base station applications. It features input matching, wideband and a thermally-enhanced package.
Parameter | Value | Unit |
Frequency (Min.) | 758 | MHz |
Frequency (Max.) | 821 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 57.0 | dBm |
Power Gain @ 780 MHz | 18.0 | dB |
Efficiency @ 780 MHz | 58.0 | % |
ACPR @ 780 MHz | -28.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, Test condition: VDS = 48 V, IDQA = 500 mA, VGSB = - 4.5 V, Pout = 49.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG1CH19A-100EF is a 100 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 1805 MHz to 2170 MHz cellular base station applications. It features input matching, wide instantaneous bandwidth and an earless thermally-enhanced package.
Parameter | Value | Unit |
Frequency (Min.) | 1805 | MHz |
Frequency (Max.) | 2170 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 50.0 | dBm |
Power Gain @ 2140 MHz | 16.8 | dB |
Efficiency @ 2140 MHz | 58.0 | % |
ACPR @ 2140 MHz | -30.0 | dBC |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 80 mA, VGSB = - 5.2 V, Pout = 41.7 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG1CH19A-370EF is a 370 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 1805 MHz to 1880 MHz cellular base station applications. It features input matching, wide instantaneous bandwidth and a thermally-enhanced package.
Parameter | Value | Unit |
Frequency (Min.) | 1805 | MHz |
Frequency (Max.) | 1880 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 55.7 | dBm |
Power Gain @ 1842 MHz | 15.5 | dB |
Efficiency @ 1842 MHz | 56.0 | % |
ACPR @ 1842 MHz | -28.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 400 mA, VGSB = - 5.2 V, Pout = 47.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG1CH22A-520EF is a 500 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 2110 MHz to 2170 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 2110 | MHz |
Frequency (Max.) | 2170 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 57.1 | dBm |
Power Gain @ 2450 MHz | 14.8 | dB |
Efficiency @ 2450 MHz | 58.2 | % |
ACPR @ 2450 MHz | -34.6 | dBC |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 200 mA, VGSB = - 5.5 V, Pout = 49.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF.ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG1CH27A-200EF is a 200 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 2496 MHz to 2690 MHz cellular base station applications. It features input matching, wide instantaneous bandwidth and an earless thermally-enhanced package.
Parameter | Value | Unit |
Frequency (Min.) | 2496 | MHz |
Frequency (Max.) | 2690 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 53.4 | dBm |
Power Gain @ 2595 MHz | 14.1 | dB |
Efficiency @ 2595 MHz | 50.0 | % |
ACPR @ 2595 MHz | -30.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 120 mA, VGSB = - 5.3 V, Pout = 45.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG2CH27A-500EFV is a 500 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 2500 MHz to 2700 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 2500 | MHz |
Frequency (Max.) | 2700 | MHz |
Supply Voltage (Typ.) | 47 | V |
56.7Psat (Typ.) | 56.7 | dBm |
Power Gain @ 2593 MHz | 15.0 | dB |
Efficiency @ 2593 MHz | 52.9 | % |
| ACPR @ 2593 MHz | -32.9 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 47 V, IDQA = 200 mA, VGSB = - 5.5 V, Pout = 47.2 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG1CH38A-200EF is a 200 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 3300 MHz to 3800 MHz cellular base station applications. It features input matching, wideband and a thermally-enhanced package.
Parameter | Value | Unit |
Frequency (Min.) | 3300 | MHz |
Frequency (Max.) | 3800 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 53.0 | dBm |
Power Gain @ 3500 MHz | 15.3 | dB |
Efficiency @ 3500 MHz | 45.0 | % |
ACPR @ 3500 MHz | -30.0 | dBC |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heat sink, test condition: VDS = 48 V, IDQA = 180 mA, VGSB = - 5.0 V, Pout = 44.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG2CH38A-450EFV is a 450 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 3300 | MHz |
Frequency (Max.) | 3800 | MHz |
Supply Voltage (Typ.) | 50 | V |
Psat (Typ.) | 56.7 | dBm |
Power Gain @ 3500 MHz | 14.7 | dB |
Efficiency @ 3500 MHz | 46 | % |
| ACPR @ 3500 MHz | -34.2 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 50 V, IDQA = 450 mA, VGSB = - 5.1 V, Pout = 47.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG1CHD8A-F2EF is a 500 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800 MHz.
| Parameter | Value | Unit |
| Frequency (Min.) | 3300 | MHz |
| Frequency (Max.) | 3800 | MHz |
| Supply Voltage (Typ.) | 52 | V |
| Psat (Typ.) | 56.5 | dBm |
| Power Gain @ 3400 MHz | 14.0 | dB |
| Efficiency @ 3400 MHz | 42.0 | % |
| ACPR @ 3400 MHz | -28.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, Test condition: VDS = 52 V, IDQA = 400 mA, VGSB = - 5.2 V,Pout = 48.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG2CH50A-200EF is a 200 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4800 MHz to 5000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 4800 | MHz |
Frequency (Max.) | 5000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 53.2 | dBm |
Power Gain @ 4900 MHz | 14.2 | dB |
Efficiency @ 4900 MHz | 44.5 | % |
| ACPR @ 4900 MHz | -28.5/-47 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 200 mA, VGSB = - 4.8 V, Pout = 44.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DOD1H0015-900EF is a 900 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for industrial,scientific and medical applications at frequencies from DC to 1500 MHz.
Parameter | Value | Unit |
Frequency (Min.) | DC | MHz |
Frequency (Max.) | 1500 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 58.7 | dBm |
Power Gain @ 915 MHz | 18.0 | dB |
Efficiency @ 915 MHz | 79.8 | % |
Note: Above Performance is the typical performance in Dynax’s demo with the device soldered onto the heatsink, test condition:VDS = 48 V, IDQ = 200 mA, Input signal CW.
DOD1H0015-1800EF is a 1800 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for RF energy applications at frequencies from DC to 1500 MHz.
Parameter | Value | Unit |
Frequency (Min.) | DC | MHz |
Frequency (Max.) | 1500 | MHz |
Supply Voltage (Typ.) | 50 | V |
Psat (Typ.) | 61.4 | dBm |
Power Gain @ 650 MHz | 20.8 | dB |
Efficiency @ 650 MHz | 80.2 | % |
Note: Above Performance is the typical performance in Dynax’s demo with the device soldered onto the heatsink, test condition:VDS = 50 V, IDQ = 200 mA, test signal is CW.
DOD1H2425-320EF is a 320 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for RF energy applications at frequencies from 2400 MHz to 2500 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 2400 | MHz |
Frequency (Max.) | 2500 | MHz |
Supply Voltage (Typ.) | 50 | V |
Psat (Typ.) | 55.1 | dBm |
Power Gain @ 2450 MHz | 14.0 | dB |
Efficiency @ 2450 MHz | 73.5 | % |
ACPR @ 2450 MHz | / | dBC |
Note: Above Performance is the typical performance in Dynax’s demo with the device soldered onto the heatsink, test condition:VDS = 50 V, VGS = - 4.8 V, test signal is CW.
DOD1H2425-600EF is a 600 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for industrial, scientific and medical applications at frequencies from 2400 MHz to 2500 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 2400 | MHz |
Frequency (Max.) | 2500 | MHz |
Supply Voltage (Typ.) | 50 | V |
Psat (Typ.) | 57.9 | dBm |
Power Gain @ 2450 MHz | 15.0 | dB |
Efficiency @ 2450 MHz | 72.5 | % |
Note: Above Performance is the typical performance in Dynax’s demo with the device soldered onto the heatsink, test condition:VDS = 50 V, VGS = - 4.8 V, test signal is CW.
DXG1CH60B-45CF/DF is a 45 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for DC to 6 GHz general purpose applications. It features wide bandwidth, high gain and an earless thermally-enhanced package.
Parameter | Value | Unit |
Frequency (Min.) | DC | MHz |
Frequency (Max.) | 6000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 46.5 | dBm |
Small Signal Gain2 | 17.0 | dB |
Peak Efficiency @ 2600 MHz | 65.0 | % |
Note:
1 Typical Performance in Dynax Wideband Class AB Demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQ = 80 mA, Input signal Pulsed CW, Pulse Width = 100 μs, Duty Cycle = 10 %.
2 Measured at Pout = Psat – 6 dB.
